Search results for "Integrated optoelectronic"

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Silicon-based light-emitting devices: Properties and applications of crystalline, amorphous and er-doped nanoclusters

2006

In this paper, we summarize the results of an extensive investigation on the properties of MOS-type light-emitting devices based on silicon nanostructures. The performances of crystalline, amorphous, and Er-doped Si nanostructures are presented and compared. We show that all devices are extremely stable and robust, resulting in an intense room temperature electroluminescence (EL) at around 900 nm or at 1.54 μm. Amorphous nanoclusters are more conductive than the crystalline counterpart. In contrast, nonradiative processes seem to be more efficient for amorphous clusters resulting in a lower quantum efficiency. Erbium doping results in the presence of an intense EL at 1.54 μm with a concomit…

Materials scienceSiliconElectroluminescent devicechemistry.chemical_elementNanocrystalQUANTUM DOTSElectroluminescenceSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaNanoclustersErbiumIntegrated optoelectronicElectroluminescence (EL)Light-emitting deviceOptical interconnectionElectrical and Electronic Engineeringbusiness.industryDopingOPTICAL-PROPERTIESAtomic and Molecular Physics and OpticsAmorphous solid1.54 MU-MchemistryNanocrystalOptoelectronicsQuantum efficiencySI NANOCRYSTALSENERGY-TRANSFERbusinessErbium
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